The graphene/n-Ge(110) interface: structure, doping, and electronic properties
J. Tesch, F. Paschke, M. Fonin, M. Weinstruk, S. Böttcher, R. Koch, A. Bostwick, Ch. Jozwiak, E. Rotenberg, A. Makarova, B. Paulus, E. Voloshina, and Yu. Dedkov
Nanoscale 10, 6088 (2018).
The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/n-Ge(110) interface are...